Population-inversion and gain estimates for a semiconductor TASER

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Population-inversion and gain estimates for a semiconductor TASER

We have investigated a solid–state design advanced (Soref et al. SPIE Proceedings, vol. 3795, 516 (1999)) to achieve Terahertz-Amplification-by-the-Stimulated-Emission-of-Radiation (TASER). The original design was based on lightto heavy-hole intersubband transitions in SiGe/Si heterostructures. This work adapts the design to electron intersubband transitions in the more readily available GaAs/G...

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ژورنال

عنوان ژورنال: IEEE Journal of Quantum Electronics

سال: 2001

ISSN: 0018-9197

DOI: 10.1109/3.892737